MEKANISME PEMBENTUKAN TITANIUM SILIKON KARBIDA DARI SISTEM Ti-SiC-C[The Mechanisme of Titanium Silicon Carbide in Ti-SiC-C System]

Abstract

Titanium silicon carbide can be synthesized from raw material of Ti-SiC-C system through plasma discharge sintering technique (PDS) at 1300 °C. The mechanism of Ti3SiC2 formation is started with the formation of intermediate phases, TiC and Ti5Si3 at 700-900 °C. Ti3SiC2 can only spontaneously be formed at 1300 °C through solid-state reaction between TiC and Ti5Si as intermediate phases. The final result is a composite consisting of matrix phase Ti3SiC2 and distributed phase TiC.