KARAKTERISASI STRUKTUR DAN SIFAT LISTRIK FILM TIPIS ZINC OXIDE DIDOPING GALLIUM DAN ALUMINIUM
DOI:
https://doi.org/10.17146/jsmi.2014.15.3.4346Keywords:
Film Tipis, ZnO, XRD, ResistivitasAbstract
KARAKTERISASI STRUKTUR DAN SIFAT LISTRIK FILM TIPIS ZINC OXIDE DIDOPING GALLIUM DAN ALUMINIUM. Film tipis Zinc Oxide (ZnO) yang didoping unsur Gallium (Ga) dan Aluminium (Al) telah ditumbuhkan di atas gelas corning menggunakan DC Magnetron Sputtering. Efek dari doping Ga dan Al pada struktur dan sifat listrik film tipis ZnO telah dipelajari menggunakan X-Ray Diffractometer (XRD) dan I-Vmeter. Karakterisasi XRD menunjukkan bahwa film tipis ZnO murni dan ZnO yang telah didoping memiliki struktur polikristal dengan tipe heksagonal wurtzite. Kualitas dari film tipis ZnO meningkat dengan didoping unsur Ga, tetapi menurun ketika didoping unsur Al. Resistivitas dari film tipis ZnO berkurang ketika didoping dengan unsur Ga dan bertambah saat didoping unsurAl. Resistivitas terendah ditunjukkan film tipis ZnO yang didoping Ga (1%) sebesar 0,209 x 107 Ωcm.
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